02. 04. 2025 14:10

Łukasz Kantor » SILICON CARBIDE Crystal growth from the gas phase

ONSEMI

• Come and listen to an interesting lecture on SiC crystal growth technology
• Gain unique insights into trends and advancements in SiC technology
• Find out how computer simulations can be used in materials science

https://www.kariera-onsemi.cz/

 

Online link: cesnet.zoom.us Ask R. Colman for password.

Attachement:

Location: Lecture room F2, first floor, Ke Karlovu 5, Prague 2

Łukasz Kantor works as a material science engineer in the R&D team at Onsemi in Rožnov pod Radhoštěm. He focuses on the growth of single crystals and polycrystals of silicon carbide (SiC) using the Physical Vapor Transport (PVT) method and also the computer modelling of this process. He graduated from the Department of Materials Engineering at VŠB–Technical University of Ostrava and is currently a doctoral student in the Materials Science and Engineering program. During his university studies, he worked as an intern at the SiC R&D department at Onsemi, where he dealt with computer modelling of SiC crystal growth by the PVT method. What he enjoys most about working in research is the utilization of acquired theoretical knowledge, its application in experiments, and the opportunity to contribute to innovations in the field of semiconductor materials.

Leaflet in PDF

 

Seminar on Magnetism

Group of Magnetism and MGML organizes a regular magnetism seminar.

Usually, we meet
every Wednesday at 14:10
in lecture room F2
Ke Karlovu 5, 121 16 Praha 2.

You are welcome to join us!

If you wish to receive regular updates on fothcoming seminars, contact R. Colman.